Advanced Node Technologies: From FinFET to Gate-All-Around

Advanced Node Technologies: From FinFET to Gate-All-Around is a comprehensive guide to modern semiconductor technology scaling, covering the transition from planar CMOS to FinFET and next-generation Gate-All-Around (GAA) transistor architectures.

Designed for semiconductor engineers, VLSI professionals, researchers, and advanced engineering students, this book bridges the gap between device physics, process integration, lithography, yield engineering, and practical advanced-node manufacturing challenges.

The book provides in-depth coverage of advanced CMOS scaling from 28nm to 2nm and beyond, including EUV lithography, backside power delivery, buried power rails, DTCO, advanced standard cells, and future technology directions such as CFET and AI/HPC scaling.

Key Features

• Comprehensive explanation of CMOS scaling fundamentals

• Detailed coverage of FinFET and Gate-All-Around (GAA) technologies

• Process integration and EUV lithography concepts

• Power, Performance, and Area (PPA) optimization techniques

• Yield engineering, defectivity analysis, and reliability physics

• Backside power delivery and buried power rail architectures

• DTCO and advanced standard-cell scaling methodologies

• Industry-inspired case studies and advanced-node insights

• Future semiconductor technology trends and sub-2nm innovations

Who Should Read This Book?

> Semiconductor Process Engineers

> Device Engineers and Researchers

> VLSI and Chip Design Professionals

> Yield and Reliability Engineers

> Graduate and PhD Students in Electronics and Nanotechnology

> Professionals preparing for advanced-node semiconductor roles

This book serves as both a technical reference and a practical industry guide for understanding the technologies driving modern semiconductor manufacturing and next-generation chip development.

This book is available exclusively as an eBook/digital edition. No physical printed copy is currently available.